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Photoelectrical characteristics of as-grown highresistance GaAs single crystals

✍ Scribed by D. L. Budnitskii; O. B. Koretskaya; О. P. Тоlbanov; А. V. Tyazhev


Book ID
106525038
Publisher
Springer
Year
2010
Tongue
English
Weight
270 KB
Volume
53
Category
Article
ISSN
1573-9228

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Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t