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Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy

✍ Scribed by Krtschil, A.; Witte, H.; Lisker, M.; Christen, J.; Krost, A.; Birkle, U.; Einfeldt, S.; Hommel, D.; Scholz, F.; Off, J.; Stutzmann, M.


Book ID
121353377
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
294 KB
Volume
77
Category
Article
ISSN
0003-6951

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