Photodetectors based on porous silicon produced by Ag-assisted electroless etching
โ Scribed by T. Hadjersi; N. Gabouze
- Book ID
- 108234155
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 140 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0925-3467
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## Abstract Samples containing silicon nanowires (SiโNWs) and highly porous structures (PโSi) were prepared by electroless wet chemical etching (EWCE) of crystalline silicon wafers using various etching parameters. Photoluminescence (PL) measurements were performed with excitation at 488โnm and a p
A novel electroless method of producing porous silicon carbide (PSiC) is presented. Unlike anodic methods of producing PSiC, the electroless process does not require electrical contact during etching. Rather, platinum metal deposited on the wafer before etching serves as a catalyst for the reduction