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Photodegradation of CdSe Quantum Dots Studied by Micro-Photoluminescence Spectroscopy

โœ Scribed by T. Ota; K. Maehashi; H. Nakashima; K. Oto; K. Murase

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
75 KB
Volume
224
Category
Article
ISSN
0370-1972

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โœฆ Synopsis

The photodegradation of CdSe quantum dots (QDs) is investigated by micro-photoluminescence (PL) measurements. With increasing exposure time of laser, the PL intensity of the QDs gradually decreases up to %25 s and remains constant after % 25 s. In contrast, the PL intensity of ZnCdSe quantum well (QWL) keeps decreasing. In micro-PL spectra, some sharp lines corresponding to single QD states disappear after the photodegradation, which would be due to defects such as dislocations induced in the QDs. All these results suggest that the dislocations induced by photodegradation in one dot do not propagate to other dots. This is very promising for CdSe QD lasers.

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โœ E. Kurtz; T. Sekiguchi; Z. Zhu; T. Yao; J.X. Shen; Y. Oka; M.Y. Shen; T. Goto ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 151 KB

Employing two different growth methods: standard molecular beam epitaxy (MBE) and lowtemperature atomic layer epitaxy (ALE) with subsequent annealing, we have obtained highquality quantum dot structures consisting of CdSe embedded in ZnSe. Single dot emission lines are observed in micro-luminescence