Photoconductivity in Tl4S3 Layered Single Crystals.
โ Scribed by I. M. Ashraf; H. A. Elshaikh; A. M. Badr
- Publisher
- John Wiley and Sons
- Year
- 2004
- Weight
- 53 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0931-7597
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Photoluminescence spectra of Tl 4 GaIn 3 S 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (ฮป exc = 532 nm), and at T = 26 K with intrinsic excitation source (ฮป exc = 406 nm
## Abstract The optical properties of Tl~2~In~2~S~3~Se layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 450โ1100 nm. The analysis of the absorption data revealed the presence of both optical indirect and direct transitions wit