Photo-induced recombination in minority-carrier dominated germanium: Case study of limitation on photo-induced open-circuit voltage decay method
✍ Scribed by Y.K. Hsieh; Y. Trisno; H.C. Card
- Publisher
- Elsevier Science
- Year
- 1988
- Weight
- 486 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0379-6787
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✦ Synopsis
The photo-induced open-circuit voltage decay (POVD) method has been used to measure the minority-carrier lifetime on induced pn-junction devices in moderately doped germanium. We found the variations in lifetime with optical illumination intensity, wavelength and temperature depart substantially from steady-state recombination as described by the Shockley-Read-Hall model. The POVD technique, while in principle capable of providing additional quantitative information concerning the recombination process, is plagued by practical limitations; we, therefore, conclude that POVD will provide qualitative information only. Further improvement on this model is discussed.