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Phosphorous clustering in germanium-rich silicon germanium

โœ Scribed by A. Chroneos; H. Bracht; R.W. Grimes; B.P. Uberuaga


Book ID
108215586
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
518 KB
Volume
154-155
Category
Article
ISSN
0921-5107

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In this work, we investigate the implantation and diffusion of phosphorous (P) in germanium (Ge). Ge wafers were implanted at two different doses (5 ร‚ 10 13 and 10 15 cm ร€2 ) and a range of energies (30, 50 and 150 keV). Part of the wafers was covered with a 40 nm silicon dioxide (SiO 2 ) and an 80