Phonons in large-band-gap materials

✍ Scribed by M Schwoerer-Böhning; A.T Macrander

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 127 KB
• Volume: 61
• Category: Article
• ISSN: 0022-3697
• DOI: 10.1016/s0022-3697(99)00341-8

✦ Synopsis

The outstanding thermal and chemical stability of large-band-gap materials like silicon carbide and III-V nitride semiconductors make them promising candidates for high-temperature electronics and short-wavelength optical applications. We present first studies of the phonon dispersion in hexagonal silicon carbide along the G -K-M direction and in hexagonal aluminum nitride along all three high-symmetry directions. Investigating the lattice dynamics of small single crystals (volume Յ 1 mm 3 ) has become feasible with the advent of high-resolution inelastic X-ray scattering.