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Phonon-drag effect in 2D hole gases

✍ Scribed by D. Lehmann; Cz. Jasiukiewicz; R.E. Strickland; K.R. Strickland; A.J. Kent; T. Paszkiewicz


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
463 KB
Volume
219-220
Category
Article
ISSN
0921-4526

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Mutual drag of 2D and 3D electron gases
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The GaAs/A1GaAs semiconductor insulator semiconductor (SIS) structure used for high-performance field effect transistors has also been used in the study of parallel coupled transport between electrons in the FET n Γ· gate(3D) and channel (2D). At temperatures above 50K the predominant coupling involv