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Phenomenological model of the diffusion of impurity atoms in ultrathin silicon layers with a nonuniform distribution of temperatures

✍ Scribed by V. V. Ovcharov; V. I. Rudakov

Book ID
110203122
Publisher
Pleiades Publishing
Year
2009
Tongue
English
Weight
209 KB
Volume
3
Category
Article
ISSN
1027-4510

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