Monitoring the ฮฑ- to ฮฒ-phase transition
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Gallas, B. ;Rivory, J. ;Arwin, H. ;Vidal, F. ;Stchakovsky, M.
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Article
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2008
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John Wiley and Sons
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English
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## Abstract MnAs layers with a 5 nm thick amorphous GaAs capping layer were grown epitaxially on GaAs(001). Generalized ellipsometric measurements were made on a 45 nm thick layer in the spectral range 1.5โ4 eV at temperatures between โ10 ยฐC and 50 ยฐC in steps of 5 ยฐC. By using both the diagonal an