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Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

✍ Scribed by Seung Yun Lee; Hyung Keun Kim; Jin Hyock Kim; Jae Sung Roh; Doo Jin Choi


Publisher
Springer
Year
2009
Tongue
English
Weight
405 KB
Volume
44
Category
Article
ISSN
0022-2461

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