Relaxation peaks associated with the oxy
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Q.F. Fang; X.P. Wang; Z.S. Li; G.G. Zhang; Z.G. Yi
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Article
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2004
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Elsevier Science
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English
โ 120 KB
The effects of bismuth doping on the oxygen-ion diffusion in oxide-ion conductors La 2-x Bi x Mo 2 O 9 (x = 0.05, 0.1, and 0.15) have been studied by both internal friction and dielectric relaxation techniques. Two internal friction peaks of relaxation type (P 1 and P 2 peak) were observed at a meas