Phase transformations in II–V semiconductors under high pressure
✍ Scribed by A. Yu. Mollaev; L. A. Saypulaeva; A. G. Alibekov; S. F. Marenkin; A. N. Babushkin
- Book ID
- 111444340
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 215 KB
- Volume
- 43
- Category
- Article
- ISSN
- 1063-7826
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Polycrystalline samples of pure Ti and Ti-V alloys containing 2. 8, 7.6, 11.4, 20, 25, 35, 40 and 50 atomic percent V were investigated up to -25 GPa at ambient temperature using a diamond anvil pressure cell and X-ray diffraction techniques. The X-ray data show that for alloys with less than -30% V
The high-pressure behavior of IrTe 2 has been studied up to 32 GPa in a diamond anvil cell by angle-dispersive X-ray diffraction at room temperature. The CdI 2 -type structure was present over the whole pressure range investigated. At about 5 GPa, a new monoclinic phase appeared; however, the transf