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Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method

✍ Scribed by Ying Zhang; Hoon-Seok Seo; Min-Jun An; Jong-Ho Choi


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
560 KB
Volume
10
Category
Article
ISSN
1566-1199

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