Perspectives, Science and Technologies for Novel Silicon on Insulator Devices || Effect of Shallow Oxide Traps on the Low-Temperature Operation of SOI Transistors

[NATO Science Series II: Mathematics, Ph

[NATO Science Series II: Mathematics, Physics and Chemistry] Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Volume 185 || Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices

✍ Flandre, Denis; Nazarov, Alexei N.; Hemment, Peter L.F. 📂 Article 📅 2005 🏛 Springer-Verlag 🌐 English ⚖ 618 KB

this Book Collects The Papers Presented During Nato Advanced Research Workshop Science And Technology Of Semiconductor On Insulator (soi) Structures And Devices Operating In A Harsh Environment Held In Kiev 26-30 April 2004. The Volume Contains Both Reviews From Invited Speakers And Selected Papers