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Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer

✍ Scribed by X.D. Huang; P.T. Lai; Johnny K.O. Sin

Book ID: 119326645
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 481 KB
Volume: 52
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2012.04.006

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