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Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system

✍ Scribed by A. Kakanakova-Georgieva; A. Kasic; C. Hallin; B. Monemar; E. Janzén


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
163 KB
Volume
2
Category
Article
ISSN
1862-6351

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