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Performance of a silicon mustrip detector with a new type of preamplifier for nuclear experiments

✍ Scribed by M. Tanaka; I. Arai; A. Manabe; M. Ninomiya; H. Nunokawa; K. Tomizawa; K. Yagi; J. Chiba; T. Kobayashi; T. Nagae; H. Sano; K. Tokushuku


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
415 KB
Volume
284
Category
Article
ISSN
0168-9002

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Silicon carbide whiskers exhibit growth predominantly in the h1 1 1i direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elemen