Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

✍ Scribed by A. Ohata; Y. Bae; T. Signamarcheix; J. Widiez; B. Ghyselen; O. Faynot; L. Clavelier; S. Cristoloveanu

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 643 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.111