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Performance improvement of phase-change memory cell with

✍ Scribed by Sannian Song; Zhitang Song; Bo Liu; Liangcai Wu; Songlin Feng

Book ID
106022057
Publisher
Springer
Year
2010
Tongue
English
Weight
564 KB
Volume
99
Category
Article
ISSN
1432-0630

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## Abstract A ^197^Au ion source was used to irradiate a Ge~2~Sb~2~Te~5~‐alloy‐based phase‐change memory (PCM) cell to study the ion‐irradiation effect on the properties of the cell. The PCM devices with the tungsten (W) heating electrode of 260 nm diameter were fabricated by 0.18 ¡m complementary