Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

Enhanced operation and retention charact

Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel

✍ Li-Jung Liu; Kuei-Shu Chang-Liao; Yi-Chuen Jian; Tien-Ko Wang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 976 KB

Charge-trapping flash memory devices with super-lattice channels having different stacking structures and thicknesses of Ge top-layer are investigated in this work. Both programming and erasing speeds are significantly improved for devices with super-lattice channels. Programming speed increases wit