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Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

✍ Scribed by Park, S. H.; Liu, Y.; Kharche, N.; Salmani Jelodar, M.; Klimeck, G.; Lundstrom, M. S.; Luisier, M.


Book ID
114621010
Publisher
IEEE
Year
2012
Tongue
English
Weight
624 KB
Volume
59
Category
Article
ISSN
0018-9383

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