Performance Characteristics of Semi-Insulator- and Dielectric-Passivated Si Strip Detectors

✍ Scribed by Ranjan, K. ;Bhardwaj, A. ;Namrata, ;Chatterji, S. ;Srivastava, A.K. ;Shivpuri, R.K.

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 319 KB
• Volume: 191
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200206)191:2<658::aid-pssa658>3.0.co;2-u

✦ Synopsis

Subject classification: 29.40. Wk; 73.40.Lq The harsh radiation environment in present and future high-energy physics experiments, such as the Large Hadron Collider (LHC), is a driving force for the development of high-voltage Si strip detectors. It is well known that mobile surface ions can affect the stability and long-term behaviour of Si detectors. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric-passivated metal-overhang structures are compared under optimal conditions. Influence of the salient design parameters such as field oxide thickness, junction depth, metal-overhang width, and the surface charge on the breakdown performance of these structures are systematically analyzed, thus providing a comprehensive picture of the behaviour of metal-overhang structures and helping in the detector optimization task. The results presented in this paper clearly demonstrate the superiority of the metal-overhang structure design employing semi-insulator-passivated structures over dielectric-passivated ones in realizing a given breakdown voltage.

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