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Peculiarities of Radiation Defect Formation and Annealing in n-Si Due to Their Interaction with Each Other and Defect Clusters

✍ Scribed by Lvgakov, P. F. ;Lukyanitsa, V. V.


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
558 KB
Volume
84
Category
Article
ISSN
0031-8965

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