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Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons

✍ Scribed by M. Karimov; Sh. Makhkamov; Sh. A. Makhmudov; R. A. Muminov; A. Z. Rakhmatov; L. S. Sandler; A. R. Sattiev; A. A. Sulaimanov; N. A. Tursunov

Book ID
111493926
Publisher
Allerton Press, Inc.
Year
2010
Tongue
English
Weight
126 KB
Volume
46
Category
Article
ISSN
0003-701X

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Radiation damage study of GaAs detectors
Radiation damage study of GaAs detectors irradiated by fast neutrons
✍ V. Linhart; P. BΓ©m; M. GΓΆtz; M. Honusek; J.J. MareΕ‘; T. Slavíček; B. Sopko; E. Ε  πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 208 KB

We investigated the radiation hardness of GaAs pad detectors irradiated by fast neutrons. The main goal was to determine the degradation of the charge collection efficiency (CCE) of the irradiated detectors and to measure the charge transport properties in terms of the mt-product. Several GaAs pad d