Semiconductor nanowires offer a very versatile approach to create tunable quantum dots. Of the different semiconductor materials that can be grown as nanowires, InAs is particularly interesting due to the large spin-orbit coupling and furthermore promising for devices due to the comparably easy proc
Pauli spin-blockade in an InAs nanowire double quantum dot
β Scribed by A. Pfund; I. Shorubalko; R. Leturcq; K. Ensslin
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 330 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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β¦ Synopsis
We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and the large singlet-triplet splitting, which can be measured and tuned by a gate voltage.
π SIMILAR VOLUMES
We theoretically examine a small current through double quantum dots with Pauli spin blockade, in which electrons cannot be transported without spin-flip or higher-order tunnel processes (cotunneling). Analytical expressions for the current are given in both cases of sequential tunneling and resonan