Passively Q-switched laser performance of the mixed crystals Nd:Lu0.15Y0.85VO4, Nd:Lu0.5Y0.5VO4and Nd:Lu0.33Y0.37Gd0.3VO4with GaAs saturable absorber
โ Scribed by Wu, Leilei; Zhao, Shengzhi; Li, Dechun; Li, Guiqiu; Yang, Kejian; Cheng, Kang; Zhao, Bin
- Book ID
- 118807733
- Publisher
- Springer
- Year
- 2012
- Tongue
- English
- Weight
- 589 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0306-8919
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Laser characteristics of a novel mixed laser crystal Nd:Lu0.15Y0.85VO4 was investigated. It is attractive for Qswitching with high repetition rate and short pulse width due to its suitable stimulated emission cross-section and short upper level lifetime. Continuous wave (CW) output power of 8.18 W w
A diode-pumped passively Q-switched Nd:Lu0.33Y0.37Gd0.3VO4 (Nd:LuYGdVO4) laser at 1.06 ฮผm with a single-walled carbon nanotube saturable absorber is demonstrated. At the incident pump power 9.1 W, the minimum pulse width of 52 ns and the maximum peak power 66.5 W can be obtained. In order to compare
Diode end-pumped continuous wave (CW) and passively Q-switched (PQS) laser performances of the mixed Nd:Gd 0.33 Lu 0.33 Y 0.33 VO 4 crystal are investigated for the first time. At the pump power of 9 W, the highest output power is 3.66 W, with an optical conversion efficiency of 40.7% and a slope ef