Passive Q -switching of a diode-pumped 1520 nm Er:Yb:YAl 3 (BO 3 ) 4 micro-laser with a Co 2+ :Mg 0.4 Al 2.4 O 4 saturable absorber
β Scribed by Chen, Y J; Lin, Y F; Zou, Y Q; Luo, Z D; Huang, Y D
- Book ID
- 121392151
- Publisher
- John Wiley and Sons
- Year
- 2013
- Tongue
- English
- Weight
- 371 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1612-2011
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π SIMILAR VOLUMES
Co 2+ -doped Mg 0.4 Al 2.4 O 4 single crystal up to β 28Γ40 mm 3 was successfully grown by the Czochralski method. By using this crystal as saturable absorber, we have demonstrated a diode-end-pumped passively Q-switched Er:glass microchip laser operating at 1535 nm for the first time to the best of
The diode-pumped passively Q-switched and Qswitching mode-locked Yb:Y2Ca3B4O12 lasers with V:YAG as saturable absorber are demonstrated in this paper. In the Qswitched regime, an average output power of 150 mW is obtained under the absorbed pump power of 6.6 W; the pulse width is 46 ns with the puls