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Passivation of GaAs(001) surfaces by chalcogen atoms (S, Se and Te)

✍ Scribed by Takahisa Ohno

Publisher
Elsevier Science
Year
1991
Weight
57 KB
Volume
255
Category
Article
ISSN
0167-2584

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## Abstract The B1 (NaCl) and B2 (CsCl) structure of rare‐earth monochalcogenides XY (X = La, Ce, Eu, and Y = S, Se, and Te) were investigated with the full‐potential linearized‐augmented plane wave (FP‐LAPW) scheme in the frame of the generalized gradient approximation (GGA). The optimized lattice