✦ LIBER ✦
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (1122) GaN free standing substrates
✍ Scribed by Tyagi, Anurag; Wu, Feng; Young, Erin C.; Chakraborty, Arpan; Ohta, Hiroaki; Bhat, Rajaram; Fujito, Kenji; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.
- Book ID
- 124089792
- Publisher
- American Institute of Physics
- Year
- 2009
- Tongue
- English
- Weight
- 510 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0003-6951
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