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Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

✍ Scribed by Yamamoto, T.; Nakamura, Y.; Pashkin, Yu. A.; Astafiev, O.; Tsai, J. S.


Book ID
120562737
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
582 KB
Volume
88
Category
Article
ISSN
0003-6951

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