Abstract
Diamond Schottky barrier diodes (SBDs) in pseudovertical configuration were fabricated and analysed. Temperature and diode size dependence analysis of forward IβV characteristics showed an increase in current with increasing diode size, and temperature, along with a decrease in device seriesβresistance (R~S~). It was revealed that device R~S~ consisted of two major factors: primarily significant resistance arising from p^+^ layer [$R_{({\rm p}^{ + } )} $], and the other from p^β^ layer [$R_{({\rm p}^{ - } )} $]. High temperature characteristics of SBDs in varying size exhibited a saturating limitation in the increase of forward current with increasing diode size, because the decrease in device series resistance (R~S~) is mainly by $R_{({\rm p}^{ - } )} $ part, whereas $R_{({\rm p}^{ + } )} $ is same irrespective of diode size, and forms to be parasitic resistance of device structure. Curve fitting analysis of experimental R~S~ with our proposed model for $R_{({\rm p}^{ + } )} $ of varying p^+^ layer thickness revealed that, parasitic resistance originating from p^+^ layer can be decreased by increasing its thickness, towards achieving high current transport.