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Parasitic current characteristics of a MOSFET with a Si-implanted gate-SiO2

✍ Scribed by T Ohzone; A Michii; T Hori

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 610 KB
Volume: 38
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)00244-a

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