Paramagnetism and Electrical Conductivity Centre Relation in Semiconductor Oligoresorcinol

✍ Scribed by Mamedov, B. A.; Vidadi, Yu. A.; Alieva, D. N.; Ragimov, A. V.

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 223 KB
• Volume: 43
• Category: Article
• ISSN: 0959-8103
• DOI: 10.1002/(sici)1097-0126(199706)43:2<126::aid-pi723>3.0.co;2-#

✦ Synopsis

The electrical properties of oligoresorcinols with various concentrations of paramagnetic centres in constant and variable electric Ðelds have (N s ) been investigated. It has been established that the electrical conductivity and the tangent of the dielectric loss angle are increased with the growth of in the N s composition of the oligoresorcinol. With increase of frequency the electrical conductivity of oligoresorcinol increases according to the usual law. It has been shown that the electrical conductivity and concentration of paramagnetic centres of oligoresorcinol are interrelated and charge transfer in a variable Ðeld predominates at the expense of jumps of charge bearers between localized states with energy near the Fermi level. The densities of the states near the Fermi level for resorcinol examples have been calculated. The results show that, in this case, paramagnetic centres of the aroxyl type determine the density of the localized states near the Fermi level.