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Paramagnetic defects in neutron irradiated bulk GaN crystals

✍ Scribed by J. H. Kim; I.-W. Park; S. H. Choh; S. S. Park; B. G. Kim; Y. H. Kang

Book ID
104556342
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
118 KB
Volume
0
Category
Article
ISSN
1862-6351

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Rutherford backscattering in the channelling mode (RBS/C) and high resolution X-ray diffraction (XRD) were used to characterize GaN films after irradiation with fast and thermal neutrons to fluences of 1.0 β€’ 10 19 n/cm 2 and 4.8 β€’ 10 19 n/cm 2 , respectively. RBS/C experiments indicate that Ga atoms