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Parallel plate chambers for monitoring the profiles of high-intensity pulsed antiproton beams

✍ Scribed by M. Hori


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
617 KB
Volume
522
Category
Article
ISSN
0168-9002

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A mathematical model to describe processes occurring during the irradiation of semiconductor materials with high power pulsed ion beams is proposed. The model takes account of recombination between vacancies and interstitial atoms and the formation of defect complexes and these processes are analyse