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P-N junctions in semiconducting TiO2studied through computer modelling

โœ Scribed by D. P. Korfiatis; S. F. Potamianou; K. A. Th Thoma

Publisher
Springer-Verlag
Year
1997
Tongue
English
Weight
195 KB
Volume
3
Category
Article
ISSN
0947-7047

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Application of small voltages in the range from 0.5 V to 1 V to an originally homogeneously Fe-doped (0.5 tool-%) TiO2 semiconductor at temperatures between 700 ยฐ C and 750 ยฐ C caused the formation of a p-n junction within the sample. This is indicated by a change of the U-I characteristics from a s