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p-doped 1.3 μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

✍ Scribed by Liu, H. Y.; Liew, S. L.; Badcock, T.; Mowbray, D. J.; Skolnick, M. S.; Ray, S. K.; Choi, T. L.; Groom, K. M.; Stevens, B.; Hasbullah, F.; Jin, C. Y.; Hopkinson, M.; Hogg, R. A.


Book ID
120809177
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
519 KB
Volume
89
Category
Article
ISSN
0003-6951

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