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p Channel thin film transistor and complementary metal–oxide–silicon inverter made of microcrystalline silicon directly deposited at 320°C

✍ Scribed by Y Chen; K Pangal; J.C Sturm; S Wagner


Book ID
117150329
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
151 KB
Volume
266-269
Category
Article
ISSN
0022-3093

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