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Oxygen vacancy formation and migration in Sr- and Mg-doped LaGaO 3 : a density functional theory study

✍ Scribed by Zhang, Jie; Liang, Er-Jun; Sun, Qiang; Jia, Yu


Book ID
121476742
Publisher
IOP Publishing
Year
2012
Tongue
English
Weight
790 KB
Volume
21
Category
Article
ISSN
1674-1056

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## Abstract Amorphous In‐Ga‐Zn‐O (a‐IGZO) is expected for channel layers in thin‐film transistors (TFTs). It is known that a‐IGZO is sensitive to an O/H‐containing atmosphere; therefore, it is important to clarify the roles of oxygen and hydrogen in a‐IGZO. This paper provides atomic and electronic