Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films
โ Scribed by Guha, Supratik; Narayanan, Vijay
- Book ID
- 120046614
- Publisher
- The American Physical Society
- Year
- 2007
- Tongue
- English
- Weight
- 293 KB
- Volume
- 98
- Category
- Article
- ISSN
- 0031-9007
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๐ SIMILAR VOLUMES
High dielectric constant (K) gate oxides such as HfO 2 have suffered from charge trapping, threshold voltage shifts and a difficulty of metal or poly-Si gates to achieve band edge work function values. We investigate how these are related to the oxygen vacancies in a series of ab-initio calculations
## Abstract HfO~2~ highโ__K__ gate dielectric has been used as a new gate dielectric in metalโoxideโsemiconductor structures. Firstโprinciples simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of