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Oxygen Stability and Leakage Current Mechanism in Ferroelectric La-Substituted Bi 4 Ti 3 O 12 Single Crystals

โœ Scribed by Noguchi, Yuji; Soga, Masayuki; Takahashi, Masatake; Miyayama, Masaru


Book ID
127276660
Publisher
Institute of Pure and Applied Physics
Year
2005
Tongue
English
Weight
243 KB
Volume
44
Category
Article
ISSN
0021-4922

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Leakage current and ferroelectric memory
โœ M.S. Tomar; R.E. Melgarejo; S.P. Singh ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 384 KB

Leakage current in ferroelectric devices is important because it affects the saturation. Rare earth substituted bismuth titanate (Bi 4 Ti 3 O 12 ) electroceramics has emerged as new material system for non-volatile ferroelectric memory. We synthesized Bi 4Kx M x Ti 3 O 12 (MZNd, Sm) for different co