Leakage current and ferroelectric memory
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M.S. Tomar; R.E. Melgarejo; S.P. Singh
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Article
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2005
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Elsevier Science
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English
โ 384 KB
Leakage current in ferroelectric devices is important because it affects the saturation. Rare earth substituted bismuth titanate (Bi 4 Ti 3 O 12 ) electroceramics has emerged as new material system for non-volatile ferroelectric memory. We synthesized Bi 4Kx M x Ti 3 O 12 (MZNd, Sm) for different co