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Oxygen in Silicon

✍ Scribed by R.K. Willardson, Albert C. Beer and Eicke R. Weber (Eds.)


Publisher
Academic Press
Year
1994
Tongue
English
Leaves
711
Series
Semiconductors and Semimetals 42
Category
Library

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✦ Synopsis


This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Key Features Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research* 297 original line drawings

✦ Table of Contents


Content:
Semiconductors and Semimetals
Page ii

Oxygen in Silicon
Page iii

Copyright page
Page iv

List of Contributors
Pages xiii-xiv

Preface
Pages xv-xvi
Fumio Shimura

Chapter 1 Introduction to Oxygen in Silicon Original Research Article
Pages 1-8
F. Shimura

Chapter 2 The Incorporation of Oxygen into Silicon Crystals Original Research Article
Pages 9-52
Wen Lin

Chapter 3 Characterization Techniques for Oxygen in Silicon Original Research Article
Pages 53-93
T.J. Shaffner, D.K. Schroder

Chapter 4 Oxygen Concentration Measurement Original Research Article
Pages 95-152
W.M. Bullis

Chapter 5 Intrinsic Point Defects in Silicon Original Research Article
Pages 153-190
S.M. Hu

Chapter 6 Some Atomic Configurations of Oxygen Original Research Article
Pages 191-249
B. Pajot

Chapter 7 Electrical Properties of Oxygen in Silicon Original Research Article
Pages 251-287
J. Michel, L.C. Kimerling

Chapter 8 Diffusion of Oxygen in Silicon Original Research Article
Pages 289-352
R.C. Newman, R. Jones

Chapter 9 Mechanisms of Oxygen Precipitation: Some Quantitative Aspects Original Research Article
Pages 353-390
T.Y. Tan, W.J. Taylor

Chapter 10 Simulation of Oxygen Precipitation Original Research Article
Pages 391-447
M. Schrems

Chapter 11 Oxygen Effect on Mechanical Properties Original Research Article
Pages 449-511
K. Sumino, I. Yonenaga

Chapter 12 Grown-in and Process-Induced Defects Original Research Article
Pages 513-575
W. Bergholz

Chapter 13 Intrinsic/Internal Gettering Original Research Article
Pages 577-617
F. Shimura

Chapter 14 Oxygen Effect on Electronic Device Performance Original Research Article
Pages 619-667
H. Tsuya

Index
Pages 669-679


πŸ“œ SIMILAR VOLUMES


Early Stages of Oxygen Precipitation in
✍ G. D. Watkins (auth.), R. Jones (eds.) πŸ“‚ Library πŸ“… 1996 πŸ› Springer Netherlands 🌐 English

<p>It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450Β°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enorΒ­ mous amou

Oxygen-17 and Silicon-29
✍ Jean-Pierre Kintzinger, Heinrich Marsmann (auth.) πŸ“‚ Library πŸ“… 1981 πŸ› Springer-Verlag Berlin Heidelberg 🌐 English

<p>Although it was shown very early [1] that the isotope 29Si is very valuable for NMR research, severe technical difficulties had to be overcome before silicon spectra could be recorded. This was due to the low sensitivity of the isotope resulting from its low gyro magnetic ratio, its low abundance

Silica and Silicon Based Nanostructures
✍ Ternon C. (ed.) πŸ“‚ Library πŸ“… 2022 πŸ› MDPI 🌐 English

This is a reprint of articles from the Special Issue published online in the open access journal Nanomaterials (ISSN 2079-4991)