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Oxygen diffusion in ion-implanted layer of Nb-doped SrTiO3

โœ Scribed by I. Sakaguchi; H. Haneda; S. Hishita; A. Watanabe; J. Tanaka

Book ID
113285466
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
669 KB
Volume
94
Category
Article
ISSN
0168-583X

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๐Ÿ“œ SIMILAR VOLUMES

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Oxygen tracer and oxygen chemical diffusion coefficients have been determined for single crystalline SrTiO 3 under defined temperature (f ), oxygen partial pressure (p(O 2 )), and acceptor (Fe) dopant concentration (m Fe ) conditions. Oxygen tracer diffusion results were obtained 873 K ี… T ี… 1173 K;

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The re-equilibration kinetics of single crystal and thin films of SrTiO 3 were monitored by measuring electrical conductivity as a function of temperature, T, and oxygen partial pressure, p O 2 , over the ranges: 823 K ฯฝ T ฯฝ 1173 K and 10 Pa ฯฝ p O 2 ฯฝ 0.1 MPa. Application of the solution of Fick's s