✦ LIBER ✦
Oxide growth retardation induced by rapid thermal annealing in Czochralsky-grown silicon consequence on the efficiency and the stability of internal gettering of Cr
✍ Scribed by N.E Chabane-Sari; B Bouazza; D Barbier
- Book ID
- 114156027
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 892 KB
- Volume
- 51-52
- Category
- Article
- ISSN
- 0167-9317
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