๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Oxidation rate and surface-potential variations of silicon during plasma oxidation

โœ Scribed by Kitajima, M.; Kamioka, I.; Nakamura, K. G.; Hishita, S.

Book ID
121284939
Publisher
The American Physical Society
Year
1996
Tongue
English
Weight
184 KB
Volume
53
Category
Article
ISSN
1098-0121

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Rate enhancement during thermal oxidatio
Rate enhancement during thermal oxidation of Ge+-implanted silicon
โœ K. Hossain; L.K. Savage; O.W. Holland ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 316 KB

The oxidation kinetics of Ge + -implanted Si(1 0 0) were determined over a temperature range of 900-1100 ยฐC in both dry and wet O 2 conditions. It will be shown that the implanted Ge substantially enhances the kinetics (compared to that in virgin Si) under certain conditions. Segregation of the Ge d