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Oxidation of tantalum silicide thin films in an RF oxygen plasma

✍ Scribed by R.Gómez-San Román; R. Pérez-Casero; J. Perrière; J.P. Enard; J.M. Martínez-Duart

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
257 KB
Volume
70-71
Category
Article
ISSN
0169-4332

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The authors report the photoluminescence (PL) property of nanocrystalline silicon (nc-Si) enhanced by oxygen plasma oxidation technology. The oxidized nanocrystalline silicon thin films were investigated by PL, transmission electron microscope (TEM), micro-Raman scattering and X-ray diffraction (XRD