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Oxidation mechanism of hydrogen-terminated Ge(1 0 0) surface

โœ Scribed by Kibyung Park; Younghwan Lee; Jonghyuck Lee; Sangwoo Lim


Book ID
108060471
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
487 KB
Volume
254
Category
Article
ISSN
0169-4332

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Oxidation of hydrogen terminated Ge(1&#x
โœ Younghwan Lee; Kibyung Park; Sangwoo Lim ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 370 KB

Ge is a promising starting material for device fabrication due to its advantages, which include narrow band gap, high hole mobility, and high solubility for p-type dopants [1,2]. In order to clean the Ge surface prior to gate oxidation, surface oxidation, and etching must occur in succession. Becaus