Oxidation of hydrogen terminated Ge(1&#x
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Younghwan Lee; Kibyung Park; Sangwoo Lim
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Article
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2008
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Elsevier Science
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English
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Ge is a promising starting material for device fabrication due to its advantages, which include narrow band gap, high hole mobility, and high solubility for p-type dopants [1,2]. In order to clean the Ge surface prior to gate oxidation, surface oxidation, and etching must occur in succession. Becaus