Oxidation behavior of SiC-AlN ceramic materials

✍ Scribed by M. Landon; P. Goeuriot; F. Thevenot

• Book ID: 103973631
• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 601 KB
• Volume: 8
• Category: Article
• ISSN: 0955-2219
• DOI: 10.1016/0955-2219(91)90121-f

✦ Synopsis

This paper describes the oxidation behavior of monophased 2H solid solution SiC-AIN materials. Oxidation behavior of three compositions, 30, 50 and 80 wt% SiC, is investigated. Oxidation experiments are carried out in the temperature range of 1450 to 1600°C under pure oxygen atmosphere. The starting oxidation temperature of monophased SiC-AlN compounds is higher than 1450°C, whereas the oxidation temperatures of SiC and AlN start at a temperature of 800-1000°C.

A thermogravimetric stud3' of the oxidation kinetics does not allow the determination of reaction mechanisms, gaseous species being trapped beneath oxides scale. The discontinuous escape of gas disrupts this layer, thus disturbing the recording of the weight measurement.